Sheet carrier concentration and current–voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure hemt incorporating the effect of traps
Chugh, Nisha, Kumar, Manoj, Bhattacharya, Monika, Gupta, R. S.Мова:
english
Журнал:
Microsystem Technologies
DOI:
10.1007/s00542-019-04322-5
Date:
January, 2019
Файл:
PDF, 1.85 MB
english, 2019