Electron Tunneling SiGe RTD with Enhanced Current Density Formed Using Quadruple-layer Buffer
Maekawa, Hirotaka, Sano, Yoshihiro, Ueno, Chihiro, Suda, YoshiyukiТом:
126
Рік:
2006
Мова:
english
Журнал:
IEEJ Transactions on Electronics, Information and Systems
DOI:
10.1541/ieejeiss.126.1088
Файл:
PDF, 1.11 MB
english, 2006