[IEEE 2018 IEEE Electron Devices Kolkata Conference (EDKCON) - Kolkata, India (2018.11.24-2018.11.25)] 2018 IEEE Electron Devices Kolkata Conference (EDKCON) - Impact of Donor Layer Thickness, Doping Concentration and Gate-Width on Gate-Capacitance of AlGaN/GaN Single and Double Heterostructure HEMT for Microwave Frequency Applications
Chugh, Nisha, Bhattacharya, Monika, Kumar, Manoj, Gupta, R.SРік:
2018
Мова:
english
DOI:
10.1109/EDKCON.2018.8770426
Файл:
PDF, 756 KB
english, 2018
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