Transition from indirect to direct band gap in SiC monolayer by chemical functionalization: A first principles study
Hoat, D.M., Naseri, Mosayeb, Hieu, Nguyen N., Ponce-Pérez, R., Rivas-Silva, J.F., Cocoletzi, Gregorio H.Мова:
english
Журнал:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2019.106320
Date:
November, 2019
Файл:
PDF, 18.84 MB
english, 2019
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