A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches
Ji, Shi Yang, Kosugi, Ryoji, Kojima, Kazutoshi, Adachi, Kohei, Kawada, Yasuyuki, Mochizuki, Kazuhiro, Nagata, Akiyo, Matsukawa, Yasuko, Yonezawa, Yoshiyuki, Yoshida, Sadafumi, Okumura, HajimeТом:
963
Журнал:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.963.131
Date:
July, 2019
Файл:
PDF, 1.73 MB
2019