Electron-beam-induced current study of electrical activity of dislocations in 4H–SiC homoeptaxial film
Bin Chen, Jun Chen, Takashi Sekiguchi, Akimasa Kinoshita, Hirofumi Matsuhata, Hirotaka Yamaguchi, Ichirou Nagai, Hajime OkumuraТом:
19
Мова:
english
Сторінки:
5
DOI:
10.1007/s10854-008-9614-4
Date:
December, 2008
Файл:
PDF, 418 KB
english, 2008