MBE growth of InAs/GaAs quantum dots on sintered porous silicon substrates with high optical quality in the 1.3 μm band
Aouassa, Mansour, Franzò, Giorgia, Assaf, Elie, Sfaxi, Larbi, MâGhaieth, Ridha, Maaref, HassenЖурнал:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-020-03012-7
Date:
February, 2020
Файл:
PDF, 1.97 MB
2020
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