[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - Ultra-scaled MOCVD MoS 2 MOSFETs with 42nm contact pitch and 250µA/µm drain current
Smets, Quentin, Groven, Benjamin, Caymax, Matty, Radu, Iuliana, Arutchelvan, Goutham, Jussot, Julien, Verreck, Devin, Asselberghs, Inge, Mehta, Ankit Nalin, Gaur, Abhinav, Lin, Dennis, Kazzi, Salim ElРік:
2019
Мова:
english
DOI:
10.1109/IEDM19573.2019.8993650
Файл:
PDF, 2.96 MB
english, 2019