Polarization-engineered AlGaN last quantum barrier for efficient deep-ultraviolet light-emitting diodes
Liu, Zhongling, Yu, Huabin, Ren, Zhongjie, Dai, Jiangnan, Chen, Changqing, Sun, HaidingЖурнал:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab8c2a
Date:
April, 2020
Файл:
PDF, 598 KB
2020
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