Performance Improvement by Blanket Boron Implant in the Sigma-shaped Trench before the Embedded SiGe Source/Drain Formation for 28-nm PMOSFET
Li, Zhong-Hua, Li, Run-Ling, Jiang, Yu-Long, Zhang, Yan-Wei, Cao, Yong-Feng, Wang, Xue-JiaoРік:
2020
Журнал:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.2985740
Файл:
PDF, 547 KB
2020