Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data
de Moraes Nogueira, Alexandro, Der Agopian, Paula Ghedini, Martino, João AntonioЖурнал:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab9db5
Date:
June, 2020
Файл:
PDF, 1.17 MB
2020
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