[IEEE 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Hsinchu, Taiwan (2020.8.10-2020.8.13)] 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Improving Interface State Density of TiN/HfO 2 /IL Gate Stack on Si 0.5 Ge 0.5 by Optimization of Post Metallization Annealing and Oxygen Pressure
Lee, Meng-Chien, Lee, Wei-Li, Yu, Cheng-Yu, Lin, Hung-Ju, Liu, Hsien-Ho, Zhang, Jun-Lin, Wang, Shin-Yuan, Chou, Chen-Han, Luo, Guang-Li, Chien, Chao-HsinРік:
2020
DOI:
10.1109/VLSI-TSA48913.2020.9203589
Файл:
PDF, 615 KB
2020